L2N7002DMT1G 115 mamps 60 volts r ds(on) = 7.5 n - channel device marking shipping ordering information L2N7002DMT1G 72d 3000 tape & reel l2n7002dmt3g 72d 10000 tape & reel maximum ratings rating symbol value unit drain?source voltage v dss 60 v dc drain?gate voltage (r gs = 1.0 m ? ) v dgr 60 v dc drain current ? continuous t c = 25 c (note 1.) ? continuous t c = 100 c (note 1.) ? pulsed (note 2.) i d i d i dm madc gate?source voltage ? continuous ? non?repetitive (t p 50 s) v gs v gsm vdc vpk thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 3.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate,(note 4.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j, t stg -55 to +150 c 1. the power dissipation of the package may result in a lower continuous drain current. 2. pulse test: pulse width 300 s, duty cycle 2.0%. 3. fr?5 = 1.0 x 0.75 x 0.062 in. 4. alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. n?channel sc?74 ? 75 800 20 40 115 small signal mosfet 115 mamps, 60 volts we declare that the material of product compliance with rohs requirements. sc-74 esd protected:1000v ? product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d =250 adc) v (br)dss 60 ? ? vdc zero gate voltage drain current t j = 25 c (v gs = 0, v ds = 60 vdc) t j = 125 c i dss ? ? ? ? 1.0 500 adc gate?body leakage current, forward (v gs = 20 vdc) i gssf ? ? 1.0 gate?body leakage current, reverse (v gs =?
20 vdc) i gssr ? ? ?1.0 on characteristics (note 2.) gate threshold v oltage (v ds = v gs ,i d = 250 adc) v gs(th) 1.0 1.6 2 vdc on?state drain current (v ds 2.0 v ds(on) ,v gs = 10 vdc) i d(on) 500 ? ? ma static drain?source on?state voltage (v gs = 10 vdc, i d = 500 madc) (v gs = 5.0 vdc, i d = 50 madc) v ds(on) ? ? ? ? 3.75 0.375 vdc static drain?source on?state resistance (v gs = 10 v, i d = 500 madc) t c = 25 c t c = 125 c (v gs = 5.0 vdc, i d = 50 madc) t c = 2 5 c t c = 125 c r ds(on) ? ? ? ? 1.4 ? 1.8 ? 7.5 13.5 7.5 13.5 ohms forward transconductance (v ds 2.0 v ds(on) ,i d = 200 madc) g fs 80 ? ? mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss ? 17 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c oss ? 10 25 pf reverse transfer capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c rss ? 2.5 5.0 pf switching characteristics (note 2.) turn?on delay time (v dd = 25 vdc , i d 500 madc, t d(on) ? 7 20 ns turn?off delay time (v r g = 25 , r l = 50 ,v gen = 10 v) t d(off) ? 11 40 ns body?drain diode ratings diode forward on?voltage (i s = 115 madc, v gs = 0 v) v sd ? ? ?1.5 vdc source current continuous (body diode) i s ? ? ?115 madc source current pulsed i sm ? ? ?800 madc 2. pulse test: pulse width 300 s, duty cycle 2.0%. adc adc L2N7002DMT1G product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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